2SJ656 MOSFET Transistor

The 2SJ656 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ656 transistor as follows.

2SJ656 Transistor Specification

Transistor Code		2SJ656
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220ML
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0755Ohm
Power Dissipation (Maximum)	PD	30W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		74nC

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