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2SJ263 MOSFET Transistor

The 2SJ263 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ263 transistor as follows.

Circuit diagram symbol of the 2SJ263 transistor

2SJ263 Transistor Specification

Transistor Code 2SJ263
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220ML
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 25W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 45nS

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