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SBC807-25LT1G PNP Transistor

The SBC807-25LT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the SBC807-25LT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SBC807-25LT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the SBC807-25LT1G transistor as follows.

Circuit diagram symbol of the SBC807-25LT1G transistor

SBC807-25LT1G Transistor Specification

Transistor Code SBC807-25LT1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code 5A1
Collector Power Dissipation (Maximum) PC 0.23W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 160
Transition Frequency FT 100MHz
Collector Capacitance CC 10pF

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