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BSS64LT1G NPN Transistor

The BSS64LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BSS64LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BSS64LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BSS64LT1G transistor as follows.

Circuit diagram symbol of the BSS64LT1G transistor

BSS64LT1G Transistor Specification

Transistor Code BSS64LT1G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code AM
Collector Power Dissipation (Maximum) PC 0.225W
Collector-Base Voltage (Maximum) VCB 120V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 60MHz
Collector Capacitance CC 20pF

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