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RT1C3904-T112 NPN Transistor

The RT1C3904-T112 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the RT1C3904-T112 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The RT1C3904-T112 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the RT1C3904-T112 transistor as follows.

Circuit diagram symbol of the RT1C3904-T112 transistor

RT1C3904-T112 Transistor Specification

Transistor Code RT1C3904-T112
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-23
Collector Power Dissipation (Maximum) PC 0.225W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 300MHz
Collector Capacitance CC 4pF

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