CMBT8050E NPN Transistor

The CMBT8050E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CMBT8050E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CMBT8050E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CMBT8050E transistor as follows.

CMBT8050E Transistor Specification

Transistor Code		CMBT8050E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.8A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		280
Transition Frequency	FT	150MHz
Collector Capacitance	CC	20pF

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