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PBSS4160U NPN Transistor

The PBSS4160U is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS4160U transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS4160U transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS4160U transistor as follows.

Circuit diagram symbol of the PBSS4160U transistor

PBSS4160U Transistor Specification

Transistor Code PBSS4160U
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT323
Transistor SMD Code 52*
Collector Power Dissipation (Maximum) PC 0.415W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 250
Transition Frequency FT 150MHz
Collector Capacitance CC 10pF

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