BC856AW-G PNP Transistor

The BC856AW-G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BC856AW-G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BC856AW-G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BC856AW-G transistor as follows.

BC856AW-G Transistor Specification

Transistor Code		BC856AW-G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT323
Transistor SMD Code		3A
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	65V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		125
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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