NSV1C201LT1G NPN Transistor

The NSV1C201LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSV1C201LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSV1C201LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSV1C201LT1G transistor as follows.

NSV1C201LT1G Transistor Specification

Transistor Code		NSV1C201LT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		VT
Collector Power Dissipation (Maximum)	PC	0.71W
Collector-Base Voltage (Maximum)	VCB	140V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	110MHz
Collector Capacitance	CC	14pF

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