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MMBT5401LT1 PNP Transistor

The MMBT5401LT1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBT5401LT1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT5401LT1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBT5401LT1 transistor as follows.

Circuit diagram symbol of the MMBT5401LT1 transistor

MMBT5401LT1 Transistor Specification

Transistor Code MMBT5401LT1
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code 2L
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 160V
Collector-Emitter Voltage (Maximum) VCE 150V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 100MHz
Collector Capacitance CC 10pF

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