NST3906DXV6T1G PNP Transistor

The NST3906DXV6T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NST3906DXV6T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NST3906DXV6T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NST3906DXV6T1G transistor as follows.

NST3906DXV6T1G Transistor Specification

Transistor Code		NST3906DXV6T1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT563
Transistor SMD Code		A2
Collector Power Dissipation (Maximum)	PC	0.36W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	250MHz
Collector Capacitance	CC	4.5pF

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