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NSV12100XV6T1G PNP Transistor

The NSV12100XV6T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSV12100XV6T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSV12100XV6T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSV12100XV6T1G transistor as follows.

Circuit diagram symbol of the NSV12100XV6T1G transistor

NSV12100XV6T1G Transistor Specification

Transistor Code NSV12100XV6T1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT563
Transistor SMD Code VE
Collector Power Dissipation (Maximum) PC 0.65W
Collector-Base Voltage (Maximum) VCB 12V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100
Collector Capacitance CC 20pF

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More Transistors Datasheets in SOT563 Package

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