MMBTH10LT1G NPN Transistor

The MMBTH10LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBTH10LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTH10LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBTH10LT1G transistor as follows.

MMBTH10LT1G Transistor Specification

Transistor Code		MMBTH10LT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		3EM.
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.004A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	650MHz
Collector Capacitance	CC	0.7pF

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