MMBT1116A PNP Transistor

The MMBT1116A is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBT1116A transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT1116A transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBT1116A transistor as follows.

MMBT1116A Transistor Specification

Transistor Code		MMBT1116A
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		11AG
Collector Power Dissipation (Maximum)	PC	0.35W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		135
Transition Frequency	FT	70MHz
Collector Capacitance	CC	25pF

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