MMBT1616 NPN Transistor

The MMBT1616 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT1616 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT1616 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT1616 transistor as follows.

MMBT1616 Transistor Specification

Transistor Code		MMBT1616
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Collector Power Dissipation (Maximum)	PC	0.35W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		135
Transition Frequency	FT	100MHz
Collector Capacitance	CC	19pF

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