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MJD253-1G PNP Transistor

The MJD253-1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJD253-1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD253-1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJD253-1G transistor as follows.

Circuit diagram symbol of the MJD253-1G transistor

MJD253-1G Transistor Specification

Transistor Code MJD253-1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO-251
Transistor SMD Code J253G
Collector Power Dissipation (Maximum) PC 12.5W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 40MHz
Collector Capacitance CC 50pF

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More Transistors Datasheets in TO-251 Package

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