HI3669 NPN Transistor

The HI3669 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HI3669 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HI3669 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HI3669 transistor as follows.

HI3669 Transistor Specification

Transistor Code		HI3669
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-251
Collector Power Dissipation (Maximum)	PC	1.25W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		300
Transition Frequency	FT	100MHz
Collector Capacitance	CC	30pF

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