L2SD1781KRLT1G NPN Transistor

The L2SD1781KRLT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the L2SD1781KRLT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The L2SD1781KRLT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the L2SD1781KRLT1G transistor as follows.

L2SD1781KRLT1G Transistor Specification

Transistor Code		L2SD1781KRLT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		AFR
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	32V
Collector Current (Maximum)	IC	0.8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	150MHz
Collector Capacitance	CC	10pF

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