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2N5551S NPN Transistor

The 2N5551S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5551S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5551S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5551S transistor as follows.

Circuit diagram symbol of the 2N5551S transistor

2N5551S Transistor Specification

Transistor Code 2N5551S
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code ZF
Collector Power Dissipation (Maximum) PC 0.35W
Collector-Base Voltage (Maximum) VCB 180V
Collector-Emitter Voltage (Maximum) VCE 160V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 80
Transition Frequency FT 300MHz
Collector Capacitance CC 6pF

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