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FXT55SM NPN Transistor

The FXT55SM is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the FXT55SM transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FXT55SM transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the FXT55SM transistor as follows.

Circuit diagram symbol of the FXT55SM transistor

FXT55SM Transistor Specification

Transistor Code FXT55SM
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT89
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 130MHz

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