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2SA2016-TD-E PNP Transistor

The 2SA2016-TD-E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA2016-TD-E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA2016-TD-E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA2016-TD-E transistor as follows.

Circuit diagram symbol of the 2SA2016-TD-E transistor

2SA2016-TD-E Transistor Specification

Transistor Code 2SA2016-TD-E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT89
Transistor SMD Code AW
Collector Power Dissipation (Maximum) PC 1.3W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 7A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 290MHz
Collector Capacitance CC 50pF

UXPython is not the creator or an official representative of the 2SA2016-TD-E PNP transistor. You can download the official 2SA2016-TD-E PNP transistor datasheet to get more infromation about this transistor.

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