ESM113 PNP Transistor

The ESM113 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the ESM113 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM113 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the ESM113 transistor as follows.

ESM113 Transistor Specification

Transistor Code		ESM113
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	90W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		3000
Transition Frequency	FT	1MHz

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