ESM13B NPN Transistor

The ESM13B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ESM13B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ESM13B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ESM13B transistor as follows.

ESM13B Transistor Specification

Transistor Code		ESM13B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	50W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	50MHz

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