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CSB649D PNP Transistor

The CSB649D is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the CSB649D transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CSB649D transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the CSB649D transistor as follows.

Circuit diagram symbol of the CSB649D transistor

CSB649D Transistor Specification

Transistor Code CSB649D
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO-126
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 180V
Collector-Emitter Voltage (Maximum) VCE 120V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 160
Transition Frequency FT 140MHz
Collector Capacitance CC 27pF

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