CSD1506Q NPN Transistor

The CSD1506Q is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CSD1506Q transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CSD1506Q transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CSD1506Q transistor as follows.

CSD1506Q Transistor Specification

Transistor Code		CSD1506Q
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-126
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	90MHz
Collector Capacitance	CC	40pF

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