BFU530W NPN Transistor

The BFU530W is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFU530W transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFU530W transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFU530W transistor as follows.

BFU530W Transistor Specification

Transistor Code		BFU530W
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT323
Transistor SMD Code		ZB*
Collector Power Dissipation (Maximum)	PC	0.45W
Collector-Base Voltage (Maximum)	VCB	24V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	0.01A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	2V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	11000MHz
Collector Capacitance	CC	0.68pF

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