NSVBC857CWT1G PNP Transistor

The NSVBC857CWT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSVBC857CWT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVBC857CWT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSVBC857CWT1G transistor as follows.

NSVBC857CWT1G Transistor Specification

Transistor Code		NSVBC857CWT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT323
Transistor SMD Code		3G
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		420
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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