BD233G NPN Transistor

The BD233G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BD233G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD233G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BD233G transistor as follows.

BD233G Transistor Specification

Transistor Code		BD233G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	45V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	50MHz

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