MJE181G NPN Transistor

The MJE181G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE181G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE181G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE181G transistor as follows.

MJE181G Transistor Specification

Transistor Code		MJE181G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126
Transistor SMD Code		JE181
Collector Power Dissipation (Maximum)	PC	12.5W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		12
Transition Frequency	FT	50MHz
Collector Capacitance	CC	40pF

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