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BC856AWT1 PNP Transistor

The BC856AWT1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BC856AWT1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BC856AWT1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BC856AWT1 transistor as follows.

Circuit diagram symbol of the BC856AWT1 transistor

BC856AWT1 Transistor Specification

Transistor Code BC856AWT1
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT323
Transistor SMD Code 3A
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 180
Transition Frequency FT 300MHz
Collector Capacitance CC 6pF

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