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2N5552 NPN Transistor

The 2N5552 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5552 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5552 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5552 transistor as follows.

Circuit diagram symbol of the 2N5552 transistor

2N5552 Transistor Specification

Transistor Code 2N5552
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO31
Collector Power Dissipation (Maximum) PC 15W
Collector-Base Voltage (Maximum) VCB 120V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 30MHz
Collector Capacitance CC 250pF

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