The 2N1045-1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1045-1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The 2N1045-1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.
Circuit diagram symbol of the 2N1045-1 transistor as follows.
Transistor Code | 2N1045-1 | |
---|---|---|
Transistor Type | BJT | |
Transistor Polarity | PNP | |
Transistor Material | Germanium(GE) | |
Package | TO31 | |
Collector Power Dissipation (Maximum) | PC | 20W |
Collector-Base Voltage (Maximum) | VCB | 100V |
Collector-Emitter Voltage (Maximum) | VCE | 60V |
Collector Current (Maximum) | IC | 3A |
Operating Junction Temperature (Maximum) | TJ | 100°C |
Emitter-Base Voltage (Maximum) | VEB | 20V |
Forward Current Transfer Ratio (hFE Value) | 20 | |
Transition Frequency | FT | 0.225MHz |
Collector Capacitance | CC | 200pF |
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