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2N1045-1 PNP Transistor

The 2N1045-1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2N1045-1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1045-1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2N1045-1 transistor as follows.

Circuit diagram symbol of the 2N1045-1 transistor

2N1045-1 Transistor Specification

Transistor Code 2N1045-1
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Package TO31
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 100°C
Emitter-Base Voltage (Maximum) VEB 20V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 0.225MHz
Collector Capacitance CC 200pF

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