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STGWT50HF65SD IGBT Transistor

The STGWT50HF65SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWT50HF65SD transistor as follows.

Circuit diagram symbol of the STGWT50HF65SD transistor

STGWT50HF65SD Transistor Specification

Transistor Code STGWT50HF65SD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector Power Dissipation (Maximum) Pc 284W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.05V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 400
Rise Time 20

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