SGU1N60XFD IGBT Transistor

The SGU1N60XFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGU1N60XFD transistor as follows.

SGU1N60XFD Transistor Specification

Transistor Code		SGU1N60XFD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		IPAK
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		90

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