NTE3321 IGBT Transistor

The NTE3321 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NTE3321 transistor as follows.

NTE3321 Transistor Specification

Transistor Code		NTE3321
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		5500

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