KP810V IGBT Transistor

The KP810V is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KP810V transistor as follows.

KP810V Transistor Specification

Transistor Code		KP810V
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO218
Collector Power Dissipation (Maximum)	Pc	50W
Collector-Emitter Voltage (Maximum)	VCE	1100V
Collector-Emitter Saturation Voltage	VCE(on)	5V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		200

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