IXSN55N120A IGBT Transistor

The IXSN55N120A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSN55N120A transistor as follows.

IXSN55N120A Transistor Specification

Transistor Code		IXSN55N120A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOTOP
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		150 oC

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