IXGN120N60A3D1 IGBT Transistor

The IXGN120N60A3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN120N60A3D1 transistor as follows.

IXGN120N60A3D1 Transistor Specification

Transistor Code		IXGN120N60A3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227B
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.35V
Collector Current (Maximum)	IC	200A
Rise Time		260

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