IXGD25N120 IGBT Transistor

The IXGD25N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGD25N120 transistor as follows.

IXGD25N120 Transistor Specification

Transistor Code		IXGD25N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO258
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		650

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