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IQIB100N60A3 IGBT Transistor

The IQIB100N60A3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IQIB100N60A3 transistor as follows.

Circuit diagram symbol of the IQIB100N60A3 transistor

IQIB100N60A3 Transistor Specification

Transistor Code IQIB100N60A3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector Power Dissipation (Maximum) Pc 335W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.45V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 384
Rise Time 60

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