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IQG1B600N120B4 IGBT Transistor

The IQG1B600N120B4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IQG1B600N120B4 transistor as follows.

Circuit diagram symbol of the IQG1B600N120B4 transistor

IQG1B600N120B4 Transistor Specification

Transistor Code IQG1B600N120B4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.87V
Collector Current (Maximum) IC 600A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 2840
Rise Time 99

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