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IGC41T120T8Q IGBT Transistor

The IGC41T120T8Q is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC41T120T8Q transistor as follows.

Circuit diagram symbol of the IGC41T120T8Q transistor

IGC41T120T8Q Transistor Specification

Transistor Code IGC41T120T8Q
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.42V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 175 oC

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