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HGT1S12N60A4S IGBT Transistor

The HGT1S12N60A4S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S12N60A4S transistor as follows.

Circuit diagram symbol of the HGT1S12N60A4S transistor

HGT1S12N60A4S Transistor Specification

Transistor Code HGT1S12N60A4S
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 54A
Operating Junction Temperature (Maximum) 150 oC

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