BSM50GAL100D IGBT Transistor

The BSM50GAL100D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BSM50GAL100D transistor as follows.

BSM50GAL100D Transistor Specification

Transistor Code		BSM50GAL100D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.3V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		640
Rise Time		140

UXPython is not the creator or an official representative of the BSM50GAL100D IGBT transistor. You can download the official BSM50GAL100D IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

APT100GF60JR IGBT Transistor MUBW15-12A6K IGBT Transistor GT8G101 IGBT Transistor VS-GA100TS60SFPBF IGBT Transistor MUBW15-06A6K IGBT Transistor IKW30N60H3 IGBT Transistor IXGH10N60 IGBT Transistor SM2G400US60 IGBT Transistor FGW25N120VD(25G120VD) IGBT Transistor IXGH10N100A IGBT Transistor 2N6977 IGBT Transistor IRG4IBC30S IGBT Transistor IXBH16N170A IGBT Transistor IGC82T170S8RM IGBT Transistor GT8G102 IGBT Transistor IGC03R60D IGBT Transistor SKM75GB12V IGBT Transistor SGH10N120RUFD IGBT Transistor MMG150D120B6UN IGBT Transistor IXXK100N60C3H1 IGBT Transistor