APTGT50X170BTP3 IGBT Transistor

The APTGT50X170BTP3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGT50X170BTP3 transistor as follows.

APTGT50X170BTP3 Transistor Specification

Transistor Code		APTGT50X170BTP3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	310W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	70A
Operating Junction Temperature (Maximum)		150 oC

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