APTGT50TDU170P IGBT Transistor

The APTGT50TDU170P is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGT50TDU170P transistor as follows.

APTGT50TDU170P Transistor Specification

Transistor Code		APTGT50TDU170P
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	310W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	70A
Operating Junction Temperature (Maximum)		150 oC

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