APTGF30H60T3 IGBT Transistor

The APTGF30H60T3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF30H60T3 transistor as follows.

APTGF30H60T3 Transistor Specification

Transistor Code		APTGF30H60T3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	140W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	42A
Operating Junction Temperature (Maximum)		150 oC

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