APT50GF60LRD IGBT Transistor

The APT50GF60LRD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GF60LRD transistor as follows.

APT50GF60LRD Transistor Specification

Transistor Code		APT50GF60LRD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC

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