AP25G45EM IGBT Transistor

The AP25G45EM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP25G45EM transistor as follows.

AP25G45EM Transistor Specification

Transistor Code		AP25G45EM
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SO8
Collector Power Dissipation (Maximum)	Pc	2.5W
Collector-Emitter Voltage (Maximum)	VCE	450V
Gate-Emitter Voltage (Maximum)	VGE	6V
Collector-Emitter Saturation Voltage	VCE(on)	6V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		200
Rise Time		24.5

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