ZXMN10A08E6TA MOSFET Transistor

The ZXMN10A08E6TA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMN10A08E6TA transistor as follows.

ZXMN10A08E6TA Transistor Specification

Transistor Code		ZXMN10A08E6TA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-26
Transistor SMD Code		10A8
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.25Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		28.2pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.2nS
Gate-Threshold Voltage (Maximum)		4V

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